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Vaio. Soft Recovery manager is able to recover lost photos, data and files due to a corrupted system caused by battery failure and IO error. Recovery Manager software can recover data from Digital film cards such as Compact. Flash, Smart. Media, Memory Stick, Multi. Media. Card (MMC), Secure Digital card (SD) and many more.
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Other Paid Photo Recovery Software. PC Inspector File Recovery. Pica. Jet Photo Recovery. Card. Recovery. ZAR (Zero Assumption Recovery)Photo Recovery Software.
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Flash memory - Wikipedia, the free encyclopedia. For the neuropsychological concept related to human memory, see Flashbulb memory. Flash memory is an electronic (solid- state) non- volatilecomputer storage medium that can be electrically erased and reprogrammed.
Toshiba developed flash memory from EEPROM (electrically erasable programmable read- only memory) in the early 1. The two main types of flash memory are named after the NAND and NORlogic gates.
The individual flash memory cells exhibit internal characteristics similar to those of the corresponding gates. Whereas EPROMs had to be completely erased before being rewritten, NAND- type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device.
NOR- type flash allows a single machine word (byte) to be written. NAND or NOR flash memory is also often used to store configuration data in numerous digital products, a task previously made possible by EEPROM or battery- powered static RAM. One key disadvantage of flash memory is that it can only endure a relatively small number of write cycles in a specific block. In addition to being non- volatile, flash memory offers fast read access times, although not as fast as static RAM or ROM. This makes it a suitable replacement for older read- only memory (ROM) chips, which are used to store program code that rarely needs to be updated, such as a computer's BIOS or the firmware of set- top boxes. Its endurance may be from as little as 1.
However, the I/O interface of NAND flash does not provide a random- access external address bus. Rather, data must be read on a block- wise basis, with typical block sizes of hundreds to thousands of bits. This makes NAND flash unsuitable as a drop- in replacement for program ROM, since most microprocessors and microcontrollers require byte- level random access. In this regard, NAND flash is similar to other secondary data storage devices, such as hard disks and optical media, and is thus, highly suitable for use in mass- storage devices, such as memory cards. The first NAND- based removable media format was Smart. Media in 1. 99. 5, and many others have followed, including: A new generation of memory card formats, including RS- MMC, mini. SD and micro. SD, feature extremely small form factors.
For example, the micro. SD card has an area of just over 1.
In single- level cell (SLC) devices, each cell stores only one bit of information. In multi- level cell (MLC) devices, including triple- level cell (TLC) devices, can store more than one bit per cell. The floating gate may be conductive (typically polysilicon in most kinds of flash memory) or non- conductive (as in SONOS flash memory). On top is the control gate (CG), as in other MOS transistors, but below this there is a floating gate (FG) insulated all around by an oxide layer. The FG is interposed between the CG and the MOSFET channel.
Because the FG is electrically isolated by its insulating layer, electrons placed on it are trapped until they are removed by another application of electric field (e. Applied voltage or UV as in EPROM). Counter- intuitively, placing electrons on the FG sets the transistor to the logical . Once the FG is charged, the electrons in it screen (partially cancel) the electric field from the CG, thus, increasing the threshold voltage (VT1) of the cell.
This means that now a higher voltage(VT2) must be applied to the CG to make the channel conductive. In order to read a value from the transistor, an intermediate voltage between the threshold voltages (VT1 & VT2) is applied to the CG. If the channel conducts at this intermediate voltage, the FG must be uncharged (if it were charged, we would not get conduction because the intermediate voltage is less than VT2), and hence, a logical . If the channel does not conduct at the intermediate voltage, it indicates that the FG is charged, and hence, a logical . The presence of a logical .
In a multi- level cell device, which stores more than one bit per cell, the amount of current flow is sensed (rather than simply its presence or absence), in order to determine more precisely the level of charge on the FG. Internal charge pumps. Since boost converters are inherently more efficient than charge pumps, researchers developing low- power SSDs have proposed returning to the dual Vcc/Vpp supply voltages used on all the early flash chips, driving the high Vpp voltage for all flash chips in a SSD with a single shared external boost converter.